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| FDH5500_F085 N-Channel UltraFET Power MOSFET October 2008 FDH5500_F085 N-Channel UltraFET Power MOSFET 55V, 75A, 7m Features Typ rDS(on) = 5.2m at VGS = 10V, ID = 75A Typ Qg(10) = 118nC at VGS = 10V Simulation Models -Temperature Compensated PSPICE and SABERTM Models Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature -TB334, "Guidelines for Soldering Surface Mount Componets to PC Boards" Qualified to AEC Q101 RoHS Compliant Applications DC Linear Mode Control Solenoid and Motor Control Switching Regulators Automotive Systems (c)2008 Fairchild Semiconductor Corporation FDH5500_F085 Rev. A1 1 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Drain to Source Voltage VDSS VDGR VGS ID EAS PD TL Tpkg Gate to Source Voltage Drain Current Continuous (TC < 135oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Dreate above 25oC Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec) Max. Package Temp. for Soldering (Package Body for 10sec) (Note 2) Parameter (Note 1) (Note 1) Ratings 55 55 20 75 See Figure 4 864 375 2.5 -55 to + 175 300 260 o Units V V V A mJ W W/oC C Drain to Gate Voltage (RGS = 20k) TJ, TSTG Operating and Storage Temperature Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area 0.4 30 oC/W o C/W Package Marking and Ordering Information Device Marking FDH5500 Device FDH5500_F085 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 50V, VGS = 0V VDS = 45V VGS = 20V TC = 150oC 55 1 250 100 V A nA On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250A ID = 75A, VGS= 10V 2 2.9 5.2 4 7 V m Dynamic Characteristics Ciss Coss Crss Qg(TOT) Qg(10) Qg(TH) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 20V Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 30V ID = 75A RL = 0.4 Ig = 1.0mA 3565 1310 395 206 118 6.2 17.8 51 268 153 8.1 pF pF pF nC nC nC nC nC FDH5500_F085 Rev. A1 2 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 75A, RL = 0.4, VGS = 10V, RGS = 2.5 13.7 102 34 22 185 91 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 75A IF = 75A, dISD/dt = 100A/s 1 60 77 1.25 78 100 V ns nC Notes: 1: Starting TJ = 25oC to175oC. 2: Starting TJ = 25oC, L = 0.48mH, IAS = 60A This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDH5500_F085 Rev. A1 3 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER 1.2 ID, DRAIN CURRENT (A) 180 150 120 90 60 30 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 CURRENT LIMITED BY PACKAGE VGS = 10V 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 NORMALIZED THERMAL IMPEDANCE, ZJC Figure 2. Maximum Continuous Drain Current vs Case Temperature 1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TC 0.01 -5 10 SINGLE PULSE 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 1 10 IDM, PEAK CURRENT (A) 1000 I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability FDH5500_F085 Rev. A1 4 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 STARTING TJ = 25oC 10 1ms 10ms DC 10 STARTING TJ = 150oC 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 1 0.01 0.1 1 10 100 1000 5000 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 160 ID, DRAIN CURRENT (A) 160 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 5V VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 6V VGS = 5.5V ID, DRAIN CURRENT (A) 120 120 80 TJ = 175oC 80 VGS = 5V 40 TJ = 25oC TJ = -55oC 40 VGS = 4.5V 0 0 0 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 7 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics ID = 75A rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 75A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 30 20 TJ = 175oC 10 TJ = 25 C o 0 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDH5500_F085 Rev. A1 5 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET Typical Characteristics 1.2 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250A 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 ID = 1mA NORMALIZED GATE THRESHOLD VOLTAGE 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 CAPACITANCE (pF) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 75A 8 VDD = 20V 6 4 2 0 VDD = 30V VDD = 40V Ciss 1000 Coss f = 1MHz VGS = 0V Crss 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 80 0 20 40 60 80 100 Qg, GATE CHARGE(nC) 120 140 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDH5500_F085 Rev. A1 6 www.fairchildsemi.com FDH5500_F085 N-Channel UltraFET Power MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM tm F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) TM The Power Franchise(R) (R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM PDP SPMTM Power-SPMTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 FDH5500_F085 Rev. A1 7 www.fairchildsemi.com |
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